The recoil effects of displacement atoms in InP implanted by N<sup>+</sup> and Bi<sup>+</sup>

Tonghe Zhang

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The recoil effects of displacement atoms in InP implanted by N⁺ and Bi⁺

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- The recoil effects of displacement atoms in InP implanted by N⁺ and Bi⁺
- Nuclear Techniques Vol. 13, Issue 6, (1990)
- 作者机构：
  
  北京师范大学低能核物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：07 November 1988，
  
  Published：01 June 1990
- 稿件说明：
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Tonghe Zhang. The recoil effects of displacement atoms in InP implanted by N⁺ and Bi⁺[J]. Nuclear techniques, 1990, 13(6): 337-342.
DOI：

Tonghe Zhang. The recoil effects of displacement atoms in InP implanted by N⁺ and Bi⁺[J]. Nuclear techniques, 1990, 13(6): 337-342. DOI：

摘要

本文给出了用背散射和沟道技术所分析的N

和Bi

注入InP中In和P原子位移的面密度分布。发现移位原子In和P面密度分布峰的深度随注入剂量的增大而加深。在相同的剂量下磷原子分布峰与表面的距离比In原子峰的大。从移位原子面密度分布峰的移动和分布的展宽与注入剂量的关系出发，研究了离子注入过程中所存在的反冲效应。并讨论了移位原子的反冲机理。

Abstract

The profiles of displacement atoms in InP implanted by N

and Bi

are given using the RBS/channelling technique in this paper. It is found that the depth of peaks of displacement In or P atom profiles increases with increase of ion dose. With the same dose the depth of peak of displacement P atom profile is greater than that of displacement In atom profile. According to the relation of the movement of peaks and the broadening of profiles to dose

the reccil effects of displacement atoms are studied

and the mechanism of recoil effects is discussed.

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Keywords

references

R. Cаrl , J. Appl. Phys . , 57 （ 1989 ）, 1656 .

E. V. K. Rao et al . , J. Appl. Phys. , 61 （ 1987 ）, 4812 .

A. L. Conjeaud et al . , J. Appl. Phys . , 59 （ 1986 ）, 1707 .

Zhang Tonghe et al . , Nucl. Instr. Meth . , 209/210 （ 1983 ）, 761 .

张通和仪表材料， 16 （ 1985 ）, 85 .

Zhang Tonghe and Carter , Radiation Effects , 77 （ 1983 ）, 97 .

张通和和 G. Carter ，原子核物理， 9 （ 1987 ）, 278 .

K. B. Winterbon , Ion implantation range and energy Deposition distributions Vol.2. Low incident ion energy . IFI/PLENUM. New York-Washington-London , 1975 .

P. sigmund , Physical Review , 184 （ 1969 ）, 383 .

G. Carter , Ion implantation in Semiconductors , London , 1978 .

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The recoil effects of displacement atoms in InP implanted by N+ and Bi+

DOI：

摘要

Abstract

关键词

Keywords

references

The recoil effects of displacement atoms in InP implanted by N⁺ and Bi⁺