A study of defects and hydrogen behavior in the high-speed Ni selective plating layer by positron annihilation

Zongyue Xing; Jingcheng Wang; Huamei Sun

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A study of defects and hydrogen behavior in the high-speed Ni selective plating layer by positron annihilation

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- A study of defects and hydrogen behavior in the high-speed Ni selective plating layer by positron annihilation
- Nuclear Techniques Vol. 13, Issue 3, (1990)
- 作者机构：
  
  上海钢铁研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：19 April 1988，
  
  Published：01 March 1990
- 稿件说明：
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Zongyue Xing, Jingcheng Wang, Huamei Sun. A study of defects and hydrogen behavior in the high-speed Ni selective plating layer by positron annihilation[J]. Nuclear techniques, 1990, 13(3): 148-152.
DOI：

Zongyue Xing, Jingcheng Wang, Huamei Sun. A study of defects and hydrogen behavior in the high-speed Ni selective plating layer by positron annihilation[J]. Nuclear techniques, 1990, 13(3): 148-152. DOI：

摘要

通过对快速Ni电刷镀层在不同温度处理后的正电子湮没Doppler展宽能谱线形参数和氢气含量的对比分析，辅之以X射线衍射、电子衍射、扫描电镜、透射电镜和金相等实验，认为快速Ni电刷镀层中含有极高密度的缺陷，且可以分为对氢敏感及对氢不敏感两种类型。由于快速Ni电刷镀层制备工艺的特殊性，正电子湮没参数在该种材料中反映不出氢质子的屏蔽行为。

Abstract

A high-speed Ni selective plating treated at different temperatures was studied by measuring S-parameter of Doppler-broadening spectrum and hydrogen content in addition to X-ray diffraction

electron diffraction

scaning electron microscope and transmission electron microscope. The results show that the material may have high density of defects.The dsfects can be distinctly divided into two types

sensitive to and not sensitive to hydrogen. Because of the particularity of the selective plating process the hydrogen proton screening effect of defects in the layer was not observed by measuring the parameters of positron annihilation.

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references

Po-We Kao et al . , Philo. Mag. A , 39 （ 1979 ）, 4 : 517 .

堂山昌男等，铁と钢， 60 （ 1974 ）, 11 : S575 .

堂山昌男等，铁と钢， 61 （ 1975 ）, S234 .

F. Alx et al . , Inter. conf. on the effect of hydrogen on behavior of materials , The Metallurgic Society of A I M E , 1975 ,p . 612 .

顾华等，核技术，（ 1982 ） 6 : 48 。

郁伟中等，核技术，（ 1982 ）, 6 : 52 。

曹必松等，核技术，（ 1985 ）. 8 : 10 。

杜风牡等，核技术，（ 1985 ）, 8 : 25 。

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