Concentration depth profiling of fluorine in amorphous-silicon

Jinghua Qian; Qiyun Shao; Yurong Zhang; Xiaofeng Wu; Agen Zhang; Longxing Zhang

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Concentration depth profiling of fluorine in amorphous-silicon

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- Concentration depth profiling of fluorine in amorphous-silicon
- Nuclear Techniques Vol. 13, Issue 2, (1990)
- 作者机构：
  
  复旦大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：13 April 1988，
  
  Published：01 February 1990
- 稿件说明：
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Jinghua Qian, Qiyun Shao, Yurong Zhang, et al. Concentration depth profiling of fluorine in amorphous-silicon[J]. Nuclear techniques, 1990, 13(2): 74-80.
DOI：

Jinghua Qian, Qiyun Shao, Yurong Zhang, et al. Concentration depth profiling of fluorine in amorphous-silicon[J]. Nuclear techniques, 1990, 13(2): 74-80. DOI：

摘要

本文用尖锐共振核反应法测定氟在非晶硅中的深度分布。为检验退卷积方法的适用范围，对能级宽度在1keV以下和1keV以上两种情况，对同一样品进行了测量。结果表明：在1keV以下退卷积方法仍可适用。

Abstract

The concentration depth profile of fluorine has been measured with narrow resonances of nuclear reactions. In order to find the applicable range of the deconvolution method' two kinds of level-widtn with

1 keV or

1keV have been measured for the same sample. The results indicate that the method is still applicable to the level-width below 1 keV.

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Keywords

references

Hideki Matsumue et al . , J. Phys. Soc. ,Japan, Suppl. A , 49 （ 1980 ）, 1253 .

Dai Guo-Cai et al . , J. Phys. Soc. ,Japan, Suppl. A , 49 （ 1980 ）, 1257 .

钱景华等，电子与自动化，（ 1984 ）, 5 : 5 .

B. Maurel and G. Amsel , Nucl. Instr. Meth. , 197 （ 1982 ）, 1 .

E. SJφNTOFT , Nucl. Instr. Meth. , 163 （ 1979 ）, 519 .

J. F. Gibbons , Projected range statistics 2nd edition Hutchinson & Ross, Inc. , Stroudsbug, Pennsy-Ivania 1975 , p. 149 .

F. Bodart et al . , Nucl. Instr. Meth. , 197 （ 1982 ） 59 .

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