Transient annealing of As-implanted silicon by a large area low energy electron beam

Huansheng Cheng; Diechi Sun

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Transient annealing of As-implanted silicon by a large area low energy electron beam

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- Transient annealing of As-implanted silicon by a large area low energy electron beam
- Nuclear Techniques Vol. 13, Issue 1, (1990)
- 作者机构：
  
  复旦大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：10 March 1988，
  
  Published：01 January 1990
- 稿件说明：
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Huansheng Cheng, Diechi Sun. Transient annealing of As-implanted silicon by a large area low energy electron beam[J]. Nuclear techniques, 1990, 13(1): 9-13.
DOI：

Huansheng Cheng, Diechi Sun. Transient annealing of As-implanted silicon by a large area low energy electron beam[J]. Nuclear techniques, 1990, 13(1): 9-13. DOI：

摘要

本文报道了用低能大面积电子束处理注砷硅片的实验结果。由四探针和背散射、沟道效应测量结果表明，用本方法退火的样品具有电激活率高和砷原子再分布小的优点。

Abstract

As-implanted silicon wafers are irradiated transiently using a large area low energy electron beam. The results on sheet resistivity and RBS/channeling experiment indicate that the electrical activation of the dopants is almost 100% complete. In contrast with the conventional furnace annealing

better recovery of the implantation damage is obtained and the dopant redistribution is weakened.

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references

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