The computer simulation of arsenic redistribution in silicon after implantation and annealing

Tingqing Zhang; Jialu Liu; Xiangming Li; Yubo Wen; Donghong Li

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The computer simulation of arsenic redistribution in silicon after implantation and annealing

更新时间：2022-08-16

- The computer simulation of arsenic redistribution in silicon after implantation and annealing
- Nuclear Techniques Vol. 12, Issue 6, (1989)
- 作者机构：
  
  西北电讯工程学院微电子研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：12 October 1987，
  
  Published：1989-06
- 稿件说明：
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Tingqing Zhang, Jialu Liu, Xiangming Li, et al. The computer simulation of arsenic redistribution in silicon after implantation and annealing[J]. Nuclear techniques, 1989, 12(6): 371-375.
DOI：

Tingqing Zhang, Jialu Liu, Xiangming Li, et al. The computer simulation of arsenic redistribution in silicon after implantation and annealing[J]. Nuclear techniques, 1989, 12(6): 371-375. DOI：

摘要

根据T. L. Chiu和H. N. Ghosh提出的双受主空位扩散模型，采用Crank-Nicolson六点差分法离散变系数扩散方程，对砷离子注入硅的扩散系数及退火后的杂质分布进行了计算机模拟，并与SRP实测结果、SUPREM-II的模拟结果进行了比较。结果表明，用本模型模拟的砷注入硅的扩散分布和结深与SRP实测值比较符合。

Abstract

It is proposed that double acceptor-level vacancies are responsible for arsenic diffusion in silicon. The diffusion equation is solved using the Crank-Nicolson differential method. A computer program is used to calculate diffusion coefficient and diffusion distribution of arsenic implanted into silicon. The results on diffusion distribution and junction depth are compared with the SRP measured profiles and the SUPREM-II simulation. A good agreement with the measured values has been observed.

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references

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S. M. Hu , Phys. Rev. , 180 （ 1969 ）, 773 .

T. L. Chiu and H. N. Ghosh , IBM J. Res. Develop. , 15 （ 1971 ）, 472 .

G. D. Watkins , Proc. 7th int. conference on the physics of semiconductors , Paris 1964 , Vol.Ⅲ P. 97 .

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赤坂洋一和塚本克博，応用物理， 46 （ 1977 ）, 11 。

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南京大学数学系计算数学专业编，偏微分方程数值解法， 1979 年，第26页。

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