Application of the 820 ion source on the 600 kV ion implanter
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Application of the 820 ion source on the 600 kV ion implanter
Nuclear TechniquesVol. 12, Issue 4, (1989)
作者机构:
中国科学院上海冶金研究所
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Received:05 October 1987,
Published:1989-04
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Anmin Guan, Yilin Sun, Haiyang Geng, et al. Application of the 820 ion source on the 600 kV ion implanter[J]. Nuclear techniques, 1989, 12(4): 229-232.
DOI:
Anmin Guan, Yilin Sun, Haiyang Geng, et al. Application of the 820 ion source on the 600 kV ion implanter[J]. Nuclear techniques, 1989, 12(4): 229-232.DOI:
Application of the 820 ion source on the 600 kV ion implanter
Application of the 820 ion source on the 600 kV heavy ion implanter is described. More than 20 ion species extracted from the ion source have been applied to the research of material modification of semiconductors
metals and insulaters. Ion beam contamination is also discussed.
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关安民 等 , 核技术 ,( 1935 ), 3 : 30 。
X. Y. Jiang et al . , Nucl. Instr. Meth . , B21 ( 1987 ), 310 .