<italic style="font-style: italic">γ</italic>-ray irradiation-induced Si-SiO<sub>2</sub> interfacial state and its energy level distribution of its density in MOS structure

Qinzhi Wu; Changshi Liu; Lingshan Zhang; Mei Han; Fang Wang; Bo Liu; Yuanfu Zhao

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γ-ray irradiation-induced Si-SiO₂ interfacial state and its energy level distribution of its density in MOS structure

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- γ-ray irradiation-induced Si-SiO₂ interfacial state and its energy level distribution of its density in MOS structure
- Nuclear Techniques Vol. 12, Issue 4, (1989)
- 作者机构：
  
  1.中国科学院新疆物理研究所
  2.航天部七七一研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：04 November 1987，
  
  Published：1989-04
- 稿件说明：
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Qinzhi Wu, Changshi Liu, Lingshan Zhang, et al. γ-ray irradiation-induced Si-SiO₂ interfacial state and its energy level distribution of its density in MOS structure[J]. Nuclear techniques, 1989, 12(4): 201-204.
DOI：

Qinzhi Wu, Changshi Liu, Lingshan Zhang, et al. γ-ray irradiation-induced Si-SiO₂ interfacial state and its energy level distribution of its density in MOS structure[J]. Nuclear techniques, 1989, 12(4): 201-204. DOI：

摘要

本文主要讨论n（100）硅栅MOS样品在

射线辐照下，氧化层电荷

∆D

、Si-SiO

界面态密度∆Dit和界面态密度的能级分布。实验证明，辐照效应与偏置电场密切相关，在＋1MV/cm偏置电场辐照时，出现氧化层电荷和界面态密度峰值，禁带中央态密度正比于被俘获空穴的密度，硅栅样品的界面态密度在禁带中服从U型分布，而铝栅n衬MOS样品辐照后出现具有确定能级(

－

=0.41﹣0.5eV）的界面态密度分布宽峰。

Abstract

The oxide trapped charge

∆D

the Si-SiO

interfacial state density

∆D

and the energy level distribution of the density introduced in polysilicon gate MOS samples with n (100) silicon substrate after

-ray irradiation are studied. Experimental evidence indicates that the effect of irradiation strongly depends on the bias field. When samples are irradiated at a+1MV/cm bias field

both the oxide trapped charge and the interfacial state density present a peak. The midgap state density is proportional to the density of holes trapped. While the interfacial state density of polysilicon gate MOS samples in the forbidden band obeys the U-type distribution

a broad peak of interfacial state density with definite energy level (

=0.41-0.5eV) appears in the A1-gate n substrate MOS samples after irradiation.

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references

P. S. Winokur , J .Appl. Phys . , 50 （ 1979 ）, 3492 .

F. B. Mclean , IEEE Trans . Nucl . Sci . , 27 （ 1980 ）, 1651 .

P. S. Winokur , Appl . Phys. lett . , 36 （ 1980 ）, 590 .

A. R. Stivers , J. Appl. Phys . , 51 （ 1980 ）, 6292 .

W. C. Johnson , Appl. Phys. lett . , 36 （ 1980 ）, 590 .

R. Castagne and A. Vapaille , Surf. Sci . , 28 （ 1971 ）, 157 .

M. Kuhn , Solid State Elec . , 13 （ 1970 ）, 873 .

D L. Griscom , J . Appl, Phys . , 58 （ 1985 ）, 2542 .

吾勤之等，第六届全国半导体物理学术会议录。

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γ-ray irradiation-induced Si-SiO2 interfacial state and its energy level distribution of its density in MOS structure

DOI：

摘要

Abstract

关键词

Keywords

references

γ-ray irradiation-induced Si-SiO₂ interfacial state and its energy level distribution of its density in MOS structure