Theoretical calculation of time response of PIN semiconductor detectors to heavy charged particles

Bao Huang

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Theoretical calculation of time response of PIN semiconductor detectors to heavy charged particles

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- Theoretical calculation of time response of PIN semiconductor detectors to heavy charged particles
- Nuclear Techniques Vol. 12, Issue 3, (1989)
- 作者机构：
  
  西北核技术研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：08 May 1987，
  
  Published：1989-03
- 稿件说明：
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Bao Huang. Theoretical calculation of time response of PIN semiconductor detectors to heavy charged particles[J]. Nuclear techniques, 1989, 12(3): 166-172.
DOI：

Bao Huang. Theoretical calculation of time response of PIN semiconductor detectors to heavy charged particles[J]. Nuclear techniques, 1989, 12(3): 166-172. DOI：

摘要

本文中，在考虑载流子输运过程和等离子体效应条件下，导出了PIN半导体探测器对重带电粒子时间响应函数的计算公式，讨论了确定计算公式中参数的方法。

Abstract

Considering the transfer process of carriers and the plasmic effect

we derived a formula of calculating time response function to heavy charged particles in PIN semiconductor detectors. The method of determining the parameters in the formula was also discussed.

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references

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R. W. Kuckuck , UCRL -51011 , 1971 .

G．伯托利亚和 A．科什，半导体探测器，原子能出版社，北京， 1975 年，第67页。

G. L. Miller et al . , IRE Trans. Nucl. Sci . , 7 （ 1960 ）, 2～3 : 185 .

W. Seibt et al . , Nucl,. Instr. Methods , 113 （ 1973 ）, 3 : 317 .

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