A study on positron lifetimes in lowly La-doped ceramic BaTiO
3
which has semi-conduction
is reported. The experiment results show that the lifetimes τ
1
and τ
2
decrease first and increase after
the intensity
I
2
increases first and decreases after with increasing amount of La
and these parameters turn at the same x value. The changes of
τ
1
τ
2
and
I
2
below the turn result from increasing of Ba vacancies with increasing La. To explain the results a complex defect (Ba vacancy+La ion complex) model was proposed. The experimental results show that this complex defect does not trap positrons.
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references
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