Carrier concentration profiles and profile composition in silicon implanted with 0.5-7.5MeV P<sup>+</sup> ions

Yuguang Wu; Huixing Zhang; Xiaoji Zhang; Yan Luo; Tonghe Zhang; Zhuen Han

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Carrier concentration profiles and profile composition in silicon implanted with 0.5-7.5MeV P⁺ ions

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- Carrier concentration profiles and profile composition in silicon implanted with 0.5-7.5MeV P⁺ ions
- Nuclear Techniques Vol. 11, Issue 12, (1988)
- 作者机构：
  
  北京师范大学低能核物理所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1988-12
- 稿件说明：
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Yuguang Wu, Huixing Zhang, Xiaoji Zhang, et al. Carrier concentration profiles and profile composition in silicon implanted with 0.5-7.5MeV P⁺ ions[J]. Nuclear techniques, 1988, 11(12): 13-16.
DOI：

Yuguang Wu, Huixing Zhang, Xiaoji Zhang, et al. Carrier concentration profiles and profile composition in silicon implanted with 0.5-7.5MeV P⁺ ions[J]. Nuclear techniques, 1988, 11(12): 13-16. DOI：

摘要

本文对磷离子能量在0.5—7.5MeV、剂量在2.0×10

—1.0×10

/cm

范围内注入硅中的载流子剖面进行了研究，发现在此条件下，n型磷载流子剖面是由两个具有不同偏差σ

front

（σ

前

）和σ

back

（σ

后

）的高斯分布相连接组成的。根据实验所得剖面特性，提出了多次迭加形成平坦剖面的方法。用这种方法结合SiO

膜屏蔽和调整注入离子能量、剂量，能够获得各种有特殊要求的载流子浓度剖面。为了得到好的可控性和可重复性，采用了瞬态退火技术。透射电镜分析表明：在我们所用退火条件下，剩余缺陷并未出现。这种迭加注入已应用于特种器件研制中，试制出的产品获得令人满意的结果。

Abstract

The MeV implantation is very important for fabricating semiconductor devices and very large scale integrated circuits. The carrier concentration profiles of high energy P

implanted into silicon have been studied. P

ions with energy ranging from 0.5 to 7.5 MeV were implanted into silicon with dose ranging from 2×10

to 10

/cm

. The results indicate that carrier concentration profiles consist of two Gaussians with different deviation σ

front

and

back

. A method of forming uniform profiles with multiple implantation was suggested.

The various specific carrier concentration profiles can be obtained by multiple implantations with different energies

doses and masking technology. Rapid thermal annealing(RTA) has been used to obtain good reliability and repeatability. The residual defects of the samples are measured by high voltage TEM. It is shown that after RTA no defects appear. Specific transistors produced using P

multiple implantation have satisfactory characters.

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Keywords

references

D. Pramanik and Current , Solid State Technology , （ 1984 ）, 5 : 211 .

J. F. Ziegler et al . , IBM. J. Res. Develop. , 15 （ 1971 ）, 452 .

P. Spinelli et al . , Nucl. Instr Meth., Phys. Res. , B6 （ 1985 ）, 283 .

H. B. Dietrich , SPIE Adv. Appl. Ion Impl . 530 （ 1985 ）, 30 .

Nathan W. Cheung , ibid , 530 （ 1985 ）. 2 .

H. S. Rupprecht , J. Vac. Scl, Technol. , 15 （ 1978 ）, 5 ： 1669 .

张通和等，北京师范大学学报，（ 1987 ）， 3 ： 41 .

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A Study of lattice damage by MeV P ion implantation in Si

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吴瑜光

张通和

孙贵如

Related Institution

Institute of Low Energy Nuclear Physics,Beijing Normal University,Beijing 100875)Sun Guiru

北京有色金属研究总院

北京师范大学低能核物理研究所北京有色金属研究总院

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Carrier concentration profiles and profile composition in silicon implanted with 0.5-7.5MeV P+ ions

DOI：

摘要

Abstract

关键词

Keywords

references

Carrier concentration profiles and profile composition in silicon implanted with 0.5-7.5MeV P⁺ ions