A transient enhanced diffusion model of lattice restoration during rapid thermal annealing (RTA)

Tonghe Zhang; Guohui Li; Yuguang Wu

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A transient enhanced diffusion model of lattice restoration during rapid thermal annealing (RTA)

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- A transient enhanced diffusion model of lattice restoration during rapid thermal annealing (RTA)
- Nuclear Techniques Vol. 11, Issue 10, (1988)
- 作者机构：
  
  北京师范大学低能核物理研究所
- 作者简介：
- 基金信息：
- DOI：
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- Published：1988-10
- 稿件说明：
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Tonghe Zhang, Guohui Li, Yuguang Wu. A transient enhanced diffusion model of lattice restoration during rapid thermal annealing (RTA)[J]. Nuclear techniques, 1988, 11(10): 44-48.
DOI：

Tonghe Zhang, Guohui Li, Yuguang Wu. A transient enhanced diffusion model of lattice restoration during rapid thermal annealing (RTA)[J]. Nuclear techniques, 1988, 11(10): 44-48. DOI：

摘要

本文研究了瞬态退火As注入Si的瞬态增强扩散模型. 观察了增强扩散与剩余缺陷和晶格恢复之间的关系. 用背散射技术测量了As浓度分布

用透射电镜观察了注入层剩余缺陷. 发现在1150℃ (或1050℃) 退火1s晶格结构基本上恢复. 在1-12s期间

缺陷密度随退火时间的增加而急剧下降. 增强扩散系数在1-5s退火期间最大. 在退火温度为1150℃时

退火时间在12-20s之间

注入层损伤几乎完全恢复

在此退火期间增强扩散系数比前述退火过程中的低. 最后讨论了退火中晶格恢复和增强扩散机理.

Abstract

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of As-implanted Si. We have studied the relations of the enhanced diffusion to residual defects and lattice restoration in detail. The As concentration profiles and residual defects are measured. It is found from the data that the lattice has been restored when the implanted sample is annealed at 1150℃ (or 1050℃) for 1s. The defeet density decreases rapidly with increase of annealing time (from 1 to 12s). The enhanced diffusion coefficient maximum appears in the annealing time ranging from 1 to 5s. Almost a "complete" annealing of displacement damage is obtained and the diffusion coefficient is less than that in above-mentioned conditions when the implanted samples are annealed at 1150℃in the time ranging from 12 to 20s. The mechanism of lattice restoration and enhanced diffusion in annealing process have been discussed.

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references

张通和等，微电子学与计算机， 3 （ 1986 ）， 10 ： 4 。

来永春等，北京师范大学学报（自然科学版），（ 1986 ） 3 ： 44 。

张通和等，北京师范大学学报（自然科学版），（ 1987 ） 3 ： 41 。

R. B, Fair et al . , J. Electrochem. Soc. , 131 （ 1984 ）, 10 ： 2387 .

S. J. Pennecook et al . , ibid , 132 （ 1985 ）, 8 ： 1962 .

R. B. Fair and J. C. C. Tsai , ibid , 122 （ 1975 ）, 12 : 1689 .

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Related Institution

Surface Physics Laboratory, Fudan University, Shanghai 200433) 2

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南昌大学材料科学与工程系

Institute of Low Energy Nuclear Physics, Radiation Beam and Materials engineering open Laboratory, Beijing Normal University

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