Study on etching behavior of makrofol film

Xiuhong Hao; Shilun Guo

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Study on etching behavior of makrofol film

更新时间：2022-08-16

- Study on etching behavior of makrofol film
- Nuclear Techniques Vol. 11, Issue 9, (1988)
- 作者机构：
  
  中国原子能科学研究院
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1988-09
- 稿件说明：
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Xiuhong Hao, Shilun Guo. Study on etching behavior of makrofol film[J]. Nuclear techniques, 1988, 11(9): 15-16.
DOI：

Xiuhong Hao, Shilun Guo. Study on etching behavior of makrofol film[J]. Nuclear techniques, 1988, 11(9): 15-16. DOI：

摘要

本文研究了Makrofol KG膜的总体蚀刻特性。研究结果表明，体蚀刻速度与蚀刻温度遵守Arr-henius方程

=a•

，其中，体激活能

=0.66±0.02eV。体蚀刻速度与蚀刻浓度的关系为

，在1—10mol/l NaOH溶液中，

=2.02。

Abstract

The bulk etching behavior of makrofol KG film has been studied. It is shown that the bulk etching rate as a function of etching temperature can be described by Arrhenius equation

-E/KT

The activation energy for bulk etching is

=0.66±0.02eV. The relation of the bulk etching rate to the concentration of etchant is

where

=2.02 for 1 to 10 mol/l NaOH.

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references

G. Somogyi and I. Hunyadi , Nucl. Tracks , （ 1979 ）, 2 : 443 .

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