Angular distributions of atoms sputtered with Ar<sup>+</sup> ions from Ag target

Haochang Pan; Zhenlan Tao; Liping Zheng; Dcxin Cao; Hengshan Zhang; Ahu Zhang; Zuyao Zhou; Wei Zhou

您当前的位置：

首页 >

文章列表页 >

Angular distributions of atoms sputtered with Ar⁺ ions from Ag target

更新时间：2022-08-16

- Angular distributions of atoms sputtered with Ar⁺ ions from Ag target
- Nuclear Techniques Vol. 11, Issue 5, (1988)
- 作者机构：
  
  1.中国科学院上海原子核研究所
  2.上海半导体器件研究所
  3.中国科学院上海冶金研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：01 July 1987，
  
  Published：1988-05
- 稿件说明：
移动端阅览
Haochang Pan, Zhenlan Tao, Liping Zheng, et al. Angular distributions of atoms sputtered with Ar⁺ ions from Ag target[J]. Nuclear techniques, 1988, 11(5): 21-23.
DOI：

Haochang Pan, Zhenlan Tao, Liping Zheng, et al. Angular distributions of atoms sputtered with Ar⁺ ions from Ag target[J]. Nuclear techniques, 1988, 11(5): 21-23. DOI：

摘要

本文描述了用溅射粒子捕集器和Rutherford背散射分析测定溅射粒子角分布的实验方法。给出了100keV Ar

在入射角分别为0°、30°、50°和80°时轰击Ag靶的溅射角分布。角分布偏离余弦形状，有前倾趋势。溅射产额随入射角增大而迅速增加。由50keV Ar

垂直入射Ag的溅射角分布计算出的总溅射产额为16.8±2.4

atoms

/Ar

。实验结果与理论值进行了比较，并作了定性分析。

Abstract

The experimental method is discribed for measuring angular distributions of sputtered particles using a sputtered particle collector and Rutherford backscattering analysis. The angular distributions are given for 100keV Ar

ions sputtering of Ag at incident angles of 0°

30°

50° and 80°. The angular distributions have large deviations from the cosine distribution and show an anisotropy with a preferred emission in forward direction with respect to the beam. The differential sputtering yield increases rapidly with increasing angle of incidence. The total sputtering yield calculated from the angular distribution for 50 keV Ar

sputtering of Ag is 16.8±2.4 atoms/ion and compared with theoretical values. Finally

the results are discussed qualitatively.

关键词

Keywords

references

P. Sigmund , Phys. Reu 184 ( 1969 ), 383 .

K. Rödelsperger et al ., Z. Phys ., 272 ( 1975 ), 127 .

Y. Yamamura . Nucl. Instr. Meth ., 194 ( 1982 ), 515 .

K. Besocke et al ., Radiat. Eff ., 66 ( 1982 ), 35 .

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Influence of sputtering and out-diffusion in Er implanted SiO₂/Si on depth profile

Isotope effect of ion sputtering

Classical scattering cross section in sputtering transport theory

Range of keV ions in Mylar films

Effect of 195keV argon ions’bombardment on surface topography of amorphous alloys

Related Author

ZHANG Tonghe WU Yuguang XIAO Zhisong LIU Andong

吴瑜光

肖志松

刘安东

GUO Wenlu ZHANG Xiurong

张秀荣

ZHANG Zhulin

韩建伟

Related Institution

Key Laboratory for Radiation Beam Technology and Materials Modification, Beijing Normal University

Institute of Low Energy Nuclear Physics, Beijing Normal University

University of Science and Technology of Jiangsu

江苏科技大学

Department of mathematics & Physics, Huainan Institute of Technology

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：880647 Visits Today：174

⁰

Angular distributions of atoms sputtered with Ar+ ions from Ag target

DOI：

摘要

Abstract

关键词

Keywords

references

Angular distributions of atoms sputtered with Ar⁺ ions from Ag target