CMOS circuits latch up induced from ionization and latch up elimination methods

Panxun Chen

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CMOS circuits latch up induced from ionization and latch up elimination methods

更新时间：2022-08-16

- CMOS circuits latch up induced from ionization and latch up elimination methods
- Nuclear Techniques Vol. 11, Issue 4, (1988)
- 作者机构：
  
  西南应用电子学研究所
- 作者简介：
- 基金信息：
- DOI：
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- Published：1988-04
- 稿件说明：
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Panxun Chen. CMOS circuits latch up induced from ionization and latch up elimination methods[J]. Nuclear techniques, 1988, 11(4): 1-7.
DOI：

Panxun Chen. CMOS circuits latch up induced from ionization and latch up elimination methods[J]. Nuclear techniques, 1988, 11(4): 1-7. DOI：

摘要

本文介绍CMOS电路在电离辐射环境中闭锁的机理、几种消除闭锁的方法和闭锁窗问题。综述了近十年来国外在消除闭锁方面主要的研究成果。其间，也介绍了作者自己的一些看法。

Abstract

The mechanism of CMOS circuits latch up in ionization radiation enviroment

several latch up elimination methods and the phenomenon of latch up window are presented. Major research results of eliminating latch up abroad in the last decade are reviewed. Some viewpoints of the author are also introduced.

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references

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