Influence of low energy Si+ ion. implantation on crystallization and trapped charges of polypropylene thin film
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Influence of low energy Si+ ion. implantation on crystallization and trapped charges of polypropylene thin film
Nuclear TechniquesVol. 11, Issue 3, (1988)
作者机构:
西安交通大学
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Published:1988-03
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Hongcai Wu. Influence of low energy Si+ ion. implantation on crystallization and trapped charges of polypropylene thin film[J]. Nuclear techniques, 1988, 11(3): 29-32,61.
DOI:
Hongcai Wu. Influence of low energy Si+ ion. implantation on crystallization and trapped charges of polypropylene thin film[J]. Nuclear techniques, 1988, 11(3): 29-32,61.DOI:
Influence of low energy Si+ ion. implantation on crystallization and trapped charges of polypropylene thin film
implanted polypropylene thin film were presented. The TSC measurement and infrared spectrum analysis indicated that trapped charges
degree of crystallization and stereoregularity of the thin film were all decreased after Si
+
ion implantation with the energy of 55 keV and the dose of 3×10
15
/cm
2
. Existance of implanted ions would result in the increase of short range spiro-structure and hence induce modification of the polymer characteristics.
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references
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