A target chamber for ion implantation at variable temperatures

Jiarui Liu; Junsi Zhou; Yupu Li; Zhen Wu

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A target chamber for ion implantation at variable temperatures

更新时间：2022-08-16

- A target chamber for ion implantation at variable temperatures
- Nuclear Techniques Vol. 11, Issue 2, (1988)
- 作者机构：
  
  中国科学院物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：15 September 1986，
  
  Published：1988-02
- 稿件说明：
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Jiarui Liu, Junsi Zhou, Yupu Li, et al. A target chamber for ion implantation at variable temperatures[J]. Nuclear techniques, 1988, 11(2): 41-42,44,63.
DOI：

Jiarui Liu, Junsi Zhou, Yupu Li, et al. A target chamber for ion implantation at variable temperatures[J]. Nuclear techniques, 1988, 11(2): 41-42,44,63. DOI：

摘要

本文介绍了一个在77—800K范围可变温度下进行离子注入和就地电学测量的靶室。该靶室曾为金属、硅化物以及某些超导材料的离子束混合实验在10W左右的束流功率下使用了几年，温度漂移在±3K。

Abstract

A target chamber for ion implantation and in-situ electrical measurement at temperatures variable between 77-800K is presented. It has over the years been used at beam power of about 10 W for ion beam mixing of metals

sillicides and some superconducting materials. Temperature drifts measured are±3 K at the values selected.

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