您当前的位置:
首页 >
文章列表页 >
Electron beam irradiation damage test of electronic devices (CCD, PIN)
更新时间:2022-08-16
    • Electron beam irradiation damage test of electronic devices (CCD, PIN)

    • Nuclear Techniques   Vol. 10, Issue 11, (1987)
    • Published:1987-11

    移动端阅览

  • Xingfa Zhang, Zixiong Zhou. Electron beam irradiation damage test of electronic devices (CCD, PIN)[J]. Nuclear techniques, 1987, 10(11): 54-55. DOI:

  •  
  •  

0

Views

27

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Experimental study of PIN photodiode for y ray detection
Chip-based efficient data collection technology from multiple crystals
An automatic solution-sample-changing peristaltic device at biological small angle X-ray scattering beamline
Radioisotope battery for particular application
Radiation damage to working or zero-biased JFET-input operational amplifiers

Related Author

YANG Shiming GONG Guanghua SHAO Beibei LI Jin
龚光华
邵贝贝
李金
LI Bing
WANG Qisheng
HE Jianhua
YU Li

Related Institution

Department of Engineering Physics, Jsinghua University
中国科学院高能物理研究所
Shanghai Advanced Research Institute, Chinese Academy of Sciences
Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China) 2
University of Chinese Academy of Sciences
0