

浏览全部资源
扫码关注微信
1.中国原子能科学研究院
2.中国科学院半导体研充所
3.中国科学院高能物理研究所
Received:20 February 1984,
Published:1987-06
移动端阅览
Yusheng Wang, Jianhua Yan, Shengnan Zheng, et al. Channelling effect and its application[J]. Nuclear techniques, 1987, 10(6): 23-28,61.
本文介绍沟道-背散射分析的实验装置。用沟道-背散射方法进行了辐射损伤测定、表面组分分析、异质外延层的缺陷分析,得到了一些对半导体材料工艺、集成电路研制的有意义的结果。
An experimental installation of channeling backscattering is described. Using channel backscattering method
study on the measurement of radiation defect
analysis of surface components
and analysis of the defect of foreign bosy extensional layer are carried out
and have achieved some results meaning full to semiconductor material technology and integrated circuit.
J. Lindhard , Dan. Vidensk. Selsk. Mat-Fys. Medd. , 34 , No. 14 , ( 1965 ).
J. W. Mayer and E. Rimini , Ion beam handbook for material analysis , Academic Press. Inc. , New York , 1977 .
G. Z. Moliere , Naturforsch , A2 , 133 ( 1947 ).
J. U. Andersen et al. , Nucl. Instr. Meth . , 38 , 210 ( 1965 ).
石原宏 , 应用物理 , 45 , 4 , 355 ( 1976 ).
J. F. Ziegler ed. , New uses of ion accelerators , Plenum Press , New York , 1975 .
G. Carter . Ion implantation of semiconductors .
J. F. Gibbons et al. , Projected range statistics, semiconductors and related materials , Distributed by Halsted Press.
R. T. Fulks et al. , Appl. Phys. Lett. , 39 , 8 , 604 ( 1981 ).
S. U. Campisano et al. Nucl. Instr. Meth. , 149 , 371 ( 1978 ).
J. H. Barrett , Phys. Rev. , 3B , 1527 ( 1971 ).
E. Bogh , Can. J. Phys. , 46 , 653 ( 1968 ).
J. F. Ziegler , Handbook of stopping cross-section for energetic ions in all elements , Vol.5 .
承焕生 等 , 原子核物理 , 3 , 2 , 177 ( 1981 )。
0
Views
22
下载量
0
CSCD
Publicity Resources
Related Articles
Related Author
Related Institution
京公网安备11010802024621