The effects of ion sputtering in high dose implantation

Tonghe Zhang

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The effects of ion sputtering in high dose implantation

更新时间：2022-08-16

- The effects of ion sputtering in high dose implantation
- Nuclear Techniques Vol. 10, Issue 2, (1987)
- 作者机构：
  
  北京师范大学低能核物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1987-02
- 稿件说明：
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Tonghe Zhang. The effects of ion sputtering in high dose implantation[J]. Nuclear techniques, 1987, 10(2): 30-33,63,26.
DOI：

Tonghe Zhang. The effects of ion sputtering in high dose implantation[J]. Nuclear techniques, 1987, 10(2): 30-33,63,26. DOI：

摘要

在离子注入材料改性的研究过程中（金属、绝缘材料和光学材料等），在许多场合下，要求注入的元素（如Fe中注入N、Y、Pb和Sn等）在靶子中占百分之几的含量，这就要求注入剂量高达10

/cm

到10

/cm

。由于离子注入的溅射效应在低能和大剂量注入中是相当明显的，因此，对这些元素高剂量注入后的杂质分布、溅射系数、溅射厚度和靶子中杂质的收集量做一分析是十分重要的。

Abstract

The effects of ion sputtering was studied in ion implantation. These are: surface sputtering

profile correction of doping concentration and total amount of doping. Relations among these effects and energy

dose

ions and target atoms were analysed. The calculations showed that the amount of Sn implanted into Fe was saturated when Sn was implanted at 100keV in the dose of greater than 3×10

/cm

. The saturated amount of Sn in Fe is dependent on energy of Sn. For example

the saturated amount of dose is only 1.35×10

/cm

when Sn is implanted at 5keV. But the amount of Sn reaches 5.6×10

/cm

when Sn is implanted at 300keV. The amount is raised about four times.

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Keywords

references

F. schwil and Wirtmaack , Radiation Effects , 29 , 31 （ 1976 ）.

G. Carter and R. Collins , ibid , 28 , 123 （ 1976 ）.

R. Collins and G Garter , ibid , 26 , 181 （ 1975 ）.

P. Sigmund , Physics Review , 184 , 383 （ 1969 ）.

N. Matsunami , Radiation Effects Letter , 50 , 39 （ 1980 ）.

W. D. Wilson et al ., Physics Review, B , 15 , 5 , 2458 （ 1977 ）.

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