A study of the nitrogen ion implantations of the 9Cr18 and GCr15 steels

Tianmin Wang; Binqing Li; Fuchao Wang; Faru Zhao; Meizhen Wu; Shufen Wang

您当前的位置：

首页 >

文章列表页 >

A study of the nitrogen ion implantations of the 9Cr18 and GCr15 steels

更新时间：2022-08-16

- A study of the nitrogen ion implantations of the 9Cr18 and GCr15 steels
- Nuclear Techniques Vol. 09, Issue 8, (1986)
- 作者机构：
  
  1.兰州大学
  2.中国科学院近代物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1986-08
- 稿件说明：
移动端阅览
Tianmin Wang, Binqing Li, Fuchao Wang, et al. A study of the nitrogen ion implantations of the 9Cr18 and GCr15 steels[J]. Nuclear techniques, 1986, 09(8): 39-42,64.
DOI：

Tianmin Wang, Binqing Li, Fuchao Wang, et al. A study of the nitrogen ion implantations of the 9Cr18 and GCr15 steels[J]. Nuclear techniques, 1986, 09(8): 39-42,64. DOI：

摘要

GCr15和9Cr18是目前被选用的两种航天用轴承钢。GCr15是普通轴承钢，具有较高的硬度和耐磨性，但耐蚀性较差。9Cr18是不锈轴承钢，具有很好的耐蚀性，但硬度和耐磨性不如GCr15，加工性能也较差，且价格较高。因此，采取适当的表面强化处理，以进一步提高9Cr18钢的耐磨性及改善GCr15的耐蚀性在实用上是很有意义的。

Abstract

A study was made on the nitrogen ion implantation layer of the 9Cr18 and GCr15 steels. The composition

structure

wearing and corrosion resistance of the implantation layers were studied. A preliminary explanation about the strengthening mechanism was given.

关键词

Keywords

references

P. D. Coode and I. J. R. Baumvol , Nucl. Instr. Meth. , 149 , 705 （ 1978 ）.

G. Dearnaley and N. E. W. Hartley , Thin Solid Films , 54 215 （ 1978 ）.

J. K. Hirvonen , J. Vac. Sci. Technol. , 15 , 1662 （ 1918 ）.

李恒德等，真空科学与技术， 5 , 357 （ 1983 ）。

崔福斋等，机械工程材料 , 5 , 1 （ 1981 ）。

谢中应等，机械工程材料， 5 ， 20 （ 1981 ）。

N. E. W. Hartley , Thin Solid Films , 64 , 177 （ 1979 ）.

M. Iwaki , Applications of ion implantation to steels, The second China-Japan joint symposfum on accelerator for nuclear science and their applications , Lanzhou , 11-13 Oct. 1983 .

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effect on ZnO thin film photoluminescence after Ag ion implantation

Formation of color centers of optical waveguide in LN crystal by implanting it with 3 MeV oxygen ions

Photoluminescence effects of a-SiO₂ films implanted with C ions and irradiated by Pb ions

XRD study on Si_xMn_1-x diluted magnetic semiconductors prepared by ion implantation

A study of photoluminescence and micro-Raman scattering in C-implanted GaN

Related Author

LI Hao

LIU Changlong

DU Jifu1

2 HUANG Ningkang2 1

LIU Chunbao1

2 ZHAO Zhiming3 WANG Zhiguang2 1

王志光

PENG Guoliang1 LI Tiecheng1 ZHANG Wenyong1 PENG Ting1 AI Zhiwei1 GUO Liping1 HE Qing2 WEN Wen2 1

Related Institution

School of Science, Tianjin University

Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology

College of Nuclear technology,Chemistry and Biology,Hubei University of Science and technology,Xianning 437100,China) 2

四川大学原子核科学技术研究所

Department of Physics,Heze University,Heze 274015,China) 2

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：880565 Visits Today：92

⁰