Temperature dependence of ion beam-mixing for multilayer W-Cu and Ta-Cu systems

Zhonglie Wang; Renyuan Hu; Yili Liu; Wenxun Wang; Jianqiang Lü

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Temperature dependence of ion beam-mixing for multilayer W-Cu and Ta-Cu systems

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- Temperature dependence of ion beam-mixing for multilayer W-Cu and Ta-Cu systems
- Nuclear Techniques Vol. 09, Issue 8, (1986)
- 作者机构：
  
  北京师范大学低能核物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1986-08
- 稿件说明：
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Zhonglie Wang, Renyuan Hu, Yili Liu, et al. Temperature dependence of ion beam-mixing for multilayer W-Cu and Ta-Cu systems[J]. Nuclear techniques, 1986, 09(8): 7-10,60,61.
DOI：

Zhonglie Wang, Renyuan Hu, Yili Liu, et al. Temperature dependence of ion beam-mixing for multilayer W-Cu and Ta-Cu systems[J]. Nuclear techniques, 1986, 09(8): 7-10,60,61. DOI：

摘要

近年来，离子束混合的碰撞理论已基本建立起来

[1-5]

，并发展了碰撞混合的计算机模拟

[6]

。离子束混合过程中，化学效应可能会起着重要的作用

[7]

。从一系列的实验结果中可以发现，碰撞混合理论与实验结果有较大的差别

[7，8]

。对过渡金属/Si系统，发现一个

—曲线规律

[1]

，即在金属-Si的混合层中金属原子的数量（

）随衬底温度倒数变化的曲线。由此，人们相信低温下碰撞混合机制起主导作用，而在较高温度（500℃以上）下，辐射对增强扩散（RED）和辐射感应分凝（RIS）起主导作用。因此，有必要研究在温度低于500℃时离子束混合过程中是否存在RED和RIS过程。由于W-Cu和Ta-Cu是两个碰撞相似系统，而其它性质又不尽相同。因此，我们选择此二系统来研究离子束混合的机制。本文从多层结构系统的W-Cu和Ta-Cu离子束混合温度相关性中研究RED和RIS等过程，选用Xe作为注入离子，注入温度为77—600K。

Abstract

The behaviour of atomic mixing for multilayer W-Cu and Ta-Cu systems irradiated by 180 keV Xe

beam to a dose of 4.5×10

/cm

at the temperatures ranging from 77K to 600K has been studied. The completely different results for W-Cu and Ta-Cu systems were found. For the W-Cu system the results of experiments show that the Cu atoms migrate to and accumulate on the surface of sample. With increasing of the temperature during ion irradiation the amount of migrated Cu atoms from the inner Cu layers to the surface of sample increases. For the Ta-Cu system it was found that atomic mixing occurs while irradiated at 77K and demixing of Ta-Cu was observed while irradiated at high temperature. The possible mechanism for these phenomena has been discussed.

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Keywords

references

J. W. Mayer et al . , Nucl. Instr. Meth. , 182/183 , 1 （ 1981 ）.

B. M. Ullrich , ibid , B7/8 , （ 1985 ）.

U. Littmark and H. O. Hofer , ibid , 168 , 329 （ 1980 ）.

P. Sigmurd and A. Gras-Marti , ibid , 168 , 389 , （ 1980 ）, 182/183 , 25 （ 1981 ）.

U. Littmark , ibid , B7/8 , 684 （ 1985 ）.

Cui Fu-Zhai and Li Heng-De , ibid , p. 650 .

Z. L. Wang , ibid , B2 , 784 （ 1984 ）.

B. M. Paine and R. S. Averhack , ibid , B7/8 , 666 （ 1985 ）.

F. W. Saris et al . , Appl. Phys. Lett ., to be published .

W. K. Chu et al . , Backscattering spectrometry , Academic Press , 1978 , p. 139 .

S. T. Picraux and W. J. Cboyke eds. , Metastable materials formation by ion implantation , Elsevier Science Publ. Comp., Inc. , 1982 , p. 35 .

L. E. Rehn , ibid , p. 17 .

A. R. Miedema , Philips. Techn. Rev. , 36 , 8 , 217 （ 19T6 ）.

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