Study of tungsten silicide formed by As ion implantation

Zhonglie Wang; Yahong Qian; Xunliang Ding; Renyuan Hu; Yili Liu

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Study of tungsten silicide formed by As ion implantation

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- Study of tungsten silicide formed by As ion implantation
- Nuclear Techniques Vol. 09, Issue 8, (1986)
- 作者机构：
  
  北京师范大学低能核物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1986-08
- 稿件说明：
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Zhonglie Wang, Yahong Qian, Xunliang Ding, et al. Study of tungsten silicide formed by As ion implantation[J]. Nuclear techniques, 1986, 09(8): 4-6,60.
DOI：

Zhonglie Wang, Yahong Qian, Xunliang Ding, et al. Study of tungsten silicide formed by As ion implantation[J]. Nuclear techniques, 1986, 09(8): 4-6,60. DOI：

摘要

大规模集成电路的发展使集成度不断提高，器件尺寸减小，线条变窄。现常用的多晶硅栅和互连，由于电阻率高，限制了集成电路的速度。近年发展起来的硅化物材料，因其电阻率低、稳定性好、自对准性能好而常被用作大规模集成电路中的欧姆接触，互连和肖特基势垒

。

Abstract

Tungsten silicide was formed by ion beam mixing at different temperatures and its crystallographic structure was investigated. The comparison was made between the sili-cides of directly sintering and of ion-beam-induced. It was found that the temperature of forming tungsten silicide was decreased by ion beam mixing. A "three-step" model was given in an attempt to explain the mechanism of silicide induced by ion beam.

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references

B. Schwartz ed. , Ohmic contacts to semiconductons , Electrochemical Society , Princeton , 1969 , p. 159 .

J. M. Poate et al . , Thin films-interdiffusion and reactions , Wiley , NewYork , 1978 ，p. 359 .

S. P. Murarka , J. Vac. Sci . Technol. , 17 , 4 , 775 （ 1980 ）.

王忠烈等，核技术， 5 , 13 （ 1986 ）。

B. Y. Tsaur and C. H. Anderson Jr . , Appl. phys. Lett. , 41 , 9 , 877 （ 1982 ）.

J. E. E. Baglin and J. M. poate ed. , Thin film-interfaces and reactions , Electrochemical Scciety , Princeton , 1980 , p. 290 .

E. Nagasawa et al . , Jap. J. Appl. phys. , 22 , 1 , 57 （ 1983 ）.

S. P. Murarka , Present at the worksphop on refractory metal silicide for VLSI I , San Juan Batisha , California, U.S.A. , May 1984 .

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