ions have been implanted tentatively into beta-alumina single crystal. The projected ranges are 20% to 30% greater than those predictéd from LSS theory while the range stragglings are quite different upon the implanted ions. Channeling measurements suggest that the implanted Mn atoms diffuse both inwards and outwards due to annealing and eventually occupy the aluminium sites in the lattice meanwhile the damage region can be restored through recrystalization. The angular width measured along the C axis(0.95°) is in good agreement with the value (0.97°)calculated from a simplified model. The adsorbed water diffuses rapidly near the surface region of the crystal
but rather slowly in deep region. Water molecules which have been bound to the lattice atoms cannot be removed until the annealing temperature is raised up to 700℃.
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references
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The Research Center of Semiconductor Functional Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, the Chinese Academy of Sciences, Shanghai 200050) 2