The study of ion sputtering mechanism on Cu-Au alloy
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The study of ion sputtering mechanism on Cu-Au alloy
Nuclear TechniquesVol. 09, Issue 1, (1986)
作者机构:
1.中国科学院上海原子核研究所
2.中国科学院上海冶金研究所
3.上海半导体器件研究所
作者简介:
基金信息:
DOI:
CLC:
Received:09 August 1984,
Published:1986-01
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Zhenxia Wang, Fuying Zhu, Wenbiao Chen, et al. The study of ion sputtering mechanism on Cu-Au alloy[J]. Nuclear techniques, 1986, 09(1): 28-31,37,61.
DOI:
Zhenxia Wang, Fuying Zhu, Wenbiao Chen, et al. The study of ion sputtering mechanism on Cu-Au alloy[J]. Nuclear techniques, 1986, 09(1): 28-31,37,61.DOI:
The study of ion sputtering mechanism on Cu-Au alloy
Dose dependence in preferential sputtering and altered surface layer of Cu-An alloy has been studied by using thermal-neutron activation and Rutherford backscattering(RBS). The copper-gold sputtering atom ratio S
Cu
/S
Au
decreases with increasing ion dose. The results of RBS measurement show that the recoil implantation of gold atoms raises with increasing ion dose. The fact suggests that the bombardment of Ar
+
ions onto Cn-Au alloy films causes the preferential sputtering of Cu atoms resulting in the depletion of Au atoms in the outmost surface layer and the Au-rich beneath this layer.
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references
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