The thickness measurements of the CaF layer on the Ge monocrystal by backscattering

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- The thickness measurements of the CaF layer on the Ge monocrystal by backscattering
- Nuclear Techniques Vol. 06, Issue 6, (1983)
- 作者机构：
  
  1.中国科学院上海原子核研究所
  2.上海科技大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：26 March 1983，
  
  Published：1983-12
- 稿件说明：
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Junheng Wu, Daming Zhang, Wenmin Wang, et al. The thickness measurements of the CaF layer on the Ge monocrystal by backscattering[J]. Nuclear techniques, 1983, 06(6): 57-57,75.
DOI：

Junheng Wu, Daming Zhang, Wenmin Wang, et al. The thickness measurements of the CaF layer on the Ge monocrystal by backscattering[J]. Nuclear techniques, 1983, 06(6): 57-57,75. DOI：

在制造同轴锗（锂漂移）探测器时，为了减少表面漏电流、降低噪声，需要在锗表面生长一层有一定厚度的氟化钙复盖膜。因此，在选择加工工艺条件时，要求测量此层的厚度。

背散射分析一般不适合于测量重基体表面上的轻材料薄膜。我们用测量基体背散射能谱的位移量的方法，测出了锗（锂漂移）表面上氟化钙薄膜的厚度。

This paper describes that light elements thickness on a heavy substrate have been measured by RBS (Rutherford backscattering spectroscopy) .

From the backscattered energy spectrum shift of the substrate Ge

the thickness of the thin CaF

layer on the monocrystal Ge has been determined. The results of measurements for sample 1 and 2 are 99Å (1+25%)

113Å (1+25%) respectively.

J. W. Mayer and E. Rimini , Ion beam handbook for material Analysis , Academic Press. Inc ., New York, San Francisco, London , 1977 , p. 43 .

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