The fabrication and characteristics of ultra-high purity p-type silicon detector at room temperature
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The fabrication and characteristics of ultra-high purity p-type silicon detector at room temperature
Nuclear TechniquesVol. 06, Issue 6, (1983)
作者机构:
中国科学院上海原子核研究所
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DOI:
CLC:
Received:26 January 1983,
Published:1983-12
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Naitan You. The fabrication and characteristics of ultra-high purity p-type silicon detector at room temperature[J]. Nuclear techniques, 1983, 06(6): 44-46,64,74.
DOI:
Naitan You. The fabrication and characteristics of ultra-high purity p-type silicon detector at room temperature[J]. Nuclear techniques, 1983, 06(6): 44-46,64,74.DOI:
The fabrication and characteristics of ultra-high purity p-type silicon detector at room temperature