Surface layer enrichment phenomena of xenon and cesium implanted in silicon and aluminium

Chunyu Tan; Yueyuan Xia; Qingqian Liu; Jitian Liu; Chengrui Wang

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Surface layer enrichment phenomena of xenon and cesium implanted in silicon and aluminium

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- Surface layer enrichment phenomena of xenon and cesium implanted in silicon and aluminium
- Nuclear Techniques Vol. 06, Issue 4, (1983)
- 作者机构：
  
  山东大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：24 December 1982，
  
  Published：1983-08
- 稿件说明：
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Chunyu Tan, Yueyuan Xia, Qingqian Liu, et al. Surface layer enrichment phenomena of xenon and cesium implanted in silicon and aluminium[J]. Nuclear techniques, 1983, 06(4): 7-9,73.
DOI：

Chunyu Tan, Yueyuan Xia, Qingqian Liu, et al. Surface layer enrichment phenomena of xenon and cesium implanted in silicon and aluminium[J]. Nuclear techniques, 1983, 06(4): 7-9,73. DOI：

摘要

近几年来，人们研究了离子注入层中注入杂质在退火过程中的再分布

[1~7]

。结果表明，广泛的离子品种，例如Pb

、As

、Sb

、Cs

、 Pt

、Bi

、Xe

、Ni

、Br

和Cr

等高剂量（≥10

atoms/cm

）注入Si后，在退火时注入的杂质显著地向表面扩散；高剂量离子注入某些金属，退火时也有向表面扩散的现象。因此，高剂量注入的杂质在退火过程中向表面扩散是一个较普遍的现象。

Abstract

RBS technique is used to study surface layer enrichment phenomena of Xe and Cs which are introduced in Si and A1 substrates respectively by means of ion implantation. The experimental results indicate that both Xe and Cs show remarkable outdiffusion behaviour and accumulate near the surface layer during annealing. However there is a definite difference between the diffusion phenomenon of Xe in Si and that of Cs in Al. Xe atoms accumulate near the surface of Si sample without any observable loss from the surface even if annealing is conducted at the temperature of 939℃. On the other hand

Cs atoms have a remakable release from the surface of A1 sample after 460℃ annealing. A possible mechanism of surface layer enrichment of implanted impurities is briefly discussed.

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references

Q. Meyer and J. W. Mayer , J . Appl. Phys ., 41 , 4166 （ 1970 ）.

J. S. Williams and W. A. Grant , Publ. Inst. Phys. Ser ., 28 , 31 （ 1976 ）.

H. Müler et al . , Appl. Phys ., 4 , 115 （ 1974 ）.

J. S. Williams et al . , Radiat. Effects , 32 , 55 （ 1977 ）.

C. E. Christodoulidies et al . , ibid , 36 , 73 （ 1978 ）.

Y. Y. Hsia et al . , ibid , 38 , 87 （ 1978 ）.

夏曰源，物理学报， 29 ， 5 , 566 （ 1980 ）。

J. E. Ziegler , Helium stopping powers and ranges in all elements , Pergramon , New York , 1977 .

J. S. Williams , Nucl. lnstr. Meth ., 126 , 205 （ 1975 ）.

J. F. Gibbons et al . , Projected ranges statistics in semiconductors and related materials , Douden, Hutchinson and ross , Strondsburg , 1975 .

T. E. Seidel et al . , Appl. Phys. Letters , 29 , 648 （ 1976 ）.

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