Synthesis and vapor phase growth of high purity HgI<sub>2</sub> crystal

Daogang Wang; Qilu Luo; Guanlu Huang

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Synthesis and vapor phase growth of high purity HgI₂ crystal

更新时间：2022-08-16

- Synthesis and vapor phase growth of high purity HgI₂ crystal
- Nuclear Techniques Vol. 05, Issue 5, (1982)
- 作者机构：
  
  上海科学技术大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：26 January 1981，
  
  Published：1982-10
- 稿件说明：
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Daogang Wang, Qilu Luo, Guanlu Huang. Synthesis and vapor phase growth of high purity HgI₂ crystal[J]. Nuclear techniques, 1982, 05(5): 29-30.
DOI：

Daogang Wang, Qilu Luo, Guanlu Huang. Synthesis and vapor phase growth of high purity HgI₂ crystal[J]. Nuclear techniques, 1982, 05(5): 29-30. DOI：

摘要

七十年代初，Willing等人首先用碘化汞晶体制得了室温核辐射探测器

。迄今，碘化汞晶体已发展为制备室温核辐射探测器的重要材料之一，近年来对此材料的研究仍十分活跃

[3~6]

。

用HgI

晶体制备核探测器首先要求材料的纯度要高。近来，人们注意到此材料与准化学计量比的偏离是影响探测器性能的重要因素。

Abstract

This paper describes a method——vapor phase growth of HgI

crystal after high purity element synthesis. Primary impurity content in the high purity HgI

crystal obtained is only in the order of ppm. The room-temperature nuclear radiation detector made by this HgI

crystal has been used to detect gamma-ray spectrum of

109

125

241

Am.

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Keywords

references

S. Roth and W. R. Willing , App. Phys. Lett. , 18 , 328 （ 1971 ）.

H. L. Malm , IEEE trans. Nucl. Sci. , NS19 , 263 （ 1972 ）.

I. F. Nicolan , J. Crystal Growth , 48 , 45 （ 1980 ）.

ibid . 48 , 51 （ 1980 ）.

ibid . 48 , 61 （ 1980 ）.

S. P. Faile et al . , ibid , 50 , 752 （ 1980 ）.

M. Schieber , ibid , 24/25 , 205 （ 1974 ）.

张光明等，核技术， 5 ， 26 （ 1981 ）.

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Synthesis and vapor phase growth of high purity HgI2 crystal

DOI：

摘要

Abstract

关键词

Keywords

references

Synthesis and vapor phase growth of high purity HgI₂ crystal