我们对能量从40keV~150keV，剂量从l×10

15

离子/cm

2

~1×10

16

离子/cm

2

砷离子注入‹111›单晶硅，进行了H

+

和He

+

背散射沟道测量。样品经600℃、700℃、825℃热退火后，都未能满意地消除损伤，而经红宝石脉冲激光退火之后，能满意地消除损伤。对40keV剂量为1×10

16

离子/cm

275

As

+

注入的硅样品，分别进行900℃、30分钟热退火和红宝石脉冲激光退火，而后分别测量了‹111›轴向和‹110›轴向背散射沟道谱，砷原子的替位率分别为90%和95%以上，同时对两种退火方式的样品，测量了‹111›轴向的角分布，观察到在热退火情况下，杂质砷原子的角分布有变窄的现象，大约窄0.2°；脉冲激光退火杂质砷原子的角分布与硅原子的角分布重合得相当好。我们又在连续打七个激光脉冲的斑点上测量了表面砷原子浓度的横向分布，其形状近似于高斯分布。

Channelling Rutherford back-scattering technique has been used to investigate silicon crystals implanted with 40~150keV As ion to doses of 1×10

15

~1×10

16

/cm

2

. After thermal annealing at 600℃

700℃ and 850℃

it was unsatisfactory to eliminate implanted damage. But the damage disappeared satisfactorily after pulsed Ruby laser annealing. 90% and 95% As atoms were in substitutional sites after thermal annealing at 900℃ and pulsed Ruby laser annealing

respectively. At the same time channeling dip of As atoms was 0.2° narrower than that of the Si atoms for thermal annealing

but they were the same for laser annealing.