同轴单开端型Ge（Li）探测器的制作过程是：先将施主杂质锂蒸发到P型锗单晶表面，经扩散形成N

+

P结构，然后在反向偏压作用下，锂离子由扩散区（N

+

）向中心漂移，逐渐补偿受主杂质镓，形成

PIN

结构。它实际上相当一个固体电离宝，其

I

区为灵敏区。由于在Ge中产生一个电子-空穴对所需的平均能量（2.96 eV）比在气体电离室中产生一个电子-离子对所需的能量小十倍，比闪烁计数器产生光电子所需能量小几十倍，因此，Ge（Li）探测器就有比这些探测器高得多的能量分辨率。

In this paper the fabrication technique of a single-ended coaxial Ge (Li) detector is described. The active volume of the detector is about 35cm3. The leakage current at 2500V bias is 4×10

-11

A. An energy resolution of 2.47 keV (FWHM) for

60

Co (1.332 MeV) has been obtained.

The technique of etch of surface without protection and the method of clean-up drift in the cryostat are discussed in detail.