本文介绍用带电粒子核反应法测量杂质层厚度和密度的方法，并用低能质子束轰击含磷硅片，通过

31

P（

p

，

α

)

28

Si共振反应产额曲线，测量了掺磷单晶硅薄层的厚度和含磷密度；同时对实验误差进行了分析。

This paper describes a method of measuring the depth and concentraction of impurity layer using nuclear reaction analysis. The phosphorus in silicon was bombarded by low energy proton beam. The depth and concentraction of phosphorus layer in monocrystalline silicon was measured by the yield curves of

31

P (

p

α

)

28

Si resonance reaction

and the errors in experiment were discussed.